G3S06516B
                               
                                                        
                            
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                        For Reference Only
| Part Number | G3S06516B | 
| LIXINC Part # | G3S06516B | 
| Manufacturer | Global Power Technology-GPT | 
| Category | |
| Description | SIC SCHOTTKY DIODE 650V 16A 3-PI | 
| Lifecycle | Active | 
| RoHS | No RoHS Information | 
| EDA/CAD Models | G3S06516B PCB Footprint and Symbol | 
| Warehouses | USA, Europe, China, Hong Kong SAR | 
| Estimated Delivery | Oct 23 - Oct 27 2024(Choose Expedited Shipping) | 
| Warranty | Up to 1 year [Limited-Warranty]* | 
| Payment |  
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| Shipping | ![]()  | 
                            
G3S06516B Specifications
| Part Number: | G3S06516B | 
| Brand: | Texas Instruments | 
| Current - Average Rectified (Io) (per Diode) : | 25.5A (DC) | 
| Current - Reverse Leakage @ Vr : | 50 µA @ 650 V | 
| Diode Configuration : | 1 Pair Common Cathode | 
| Diode Type : | Silicon Carbide Schottky | 
| Mounting Type : | Through Hole | 
| Operating Temperature - Junction : | -55°C ~ 175°C | 
| Package / Case : | TO-247-3 | 
| Product Status : | Active | 
| Reverse Recovery Time (trr) : | 0 ns | 
| Speed : | No Recovery Time > 500mA (Io) | 
| Supplier Device Package : | TO-247AB | 
| Voltage - DC Reverse (Vr) (Max) : | 650 V | 
| Voltage - Forward (Vf) (Max) @ If : | 1.7 V @ 8 A | 
G3S06516B Documents
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